As a PhD candidate in R&D CMOS Integration, you will conduct advanced research on the development and optimization of ferroelectric HfO₂-based devices for next‑generation memory and AI applications.


Core Research Topics


Ferroelectric HfO₂ Devices (FeFET / FeCAP)
+ Optimization of HfO₂ thin films for stable ferroelectric behavior and investigation of polarization switching, retention, endurance, and variability.
+ Device-level physics analysis of ferroeletricity based CMOS embedded devices and in-memory computing applications.
+ Exploration of integration schemes into advanced FDSOI (FDX®) and bulk CMOS technologies.



Advanced Characterization & Materials Analysis
+ Structural and electrical analysis using: TEM / STEM (including advanced contrast techniques such as DPC) / SEM and nanoscale imaging tools
+ Electrical device and simple circuit characterization and mapping the results to structural data.



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