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Principal Engineer - GaN Epitaxy Development

Company

Infineon Technologies AG

Location

singapore, singapore

Posted

July 12, 2026

Position Overview

As a GaN Epitaxy Development Engineer on our Research & Development team, you'll merge creativity with technical expertise to shape the future of technology, driving groundbreaking projects and bringing new ideas to life.

Your Role Epitaxial Growth & Recipe Development
  • Design GaN epitaxial structures (e.g., buffer layers, superlattices, and HEMT structures) based on specific device performance targets.
  • Direct hands‑on MOCVD (Metal‑Organic Chemical Vapor Deposition) recipe optimization.
Process Integration & Manufacturability
  • Transition new epitaxial processes from R&D into high‑yield, high‑volume manufacturing.
  • Address manufacturability hurdles like defect density, wafer stress, and layer uniformity.
Data Analytics & Metrology
  • Utilize Design of Experiments (DOE) and Statistical Process Control (SPC) to monitor and improve processes.
  • Analyze characterization data using techniques ...

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