ESSENTIAL DUTIES AND RESPONSIBILITIES:

• In this position, the individual will be responsible for designing, developing, modifying and evaluating chip architecture and Core circuit structures for feasibility study of high performance NAND flash, including new, most advanced 3-dimentional NAND memories.
• Evaluation of these circuits will be done through HSPICE, PRIMESIM and VERILOG simulations and through silicon evaluation when the silicon arrives.

REQUIRED:

• Requires MS or BS degree in Electrical Engineering or equivalent with 8 or more years of relevant experience.
• Knowledge and/or experience in non-volatile memory design (NAND flash memory cell operation in particular) is a big advantage
• A strong device background and experience with evaluating new process technologies for use in design is preferred.
• The ideal candidate must have proven ability to achieve result...